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BFG 193
NPN Silicon RF Transistor * For low noise, high-gain amplifiers up to 2GHz * For linear broadband amplifiers * fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 193 BFG193 Q62702-F1291 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 600 150 - 65 ... + 150 - 65 ... + 150 105 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS 87 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFG 193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V A 100 nA 100 A 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BFG 193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.6 0.4 2 -
GHz pF 0.9 dB 1.3 2.1 -
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 13.5 8 15.5 10 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
BFG 193
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
700 mW 600
Ptot
550 500 450 400 350 300 250 200 150 100 50 0 0
TS
TA
20
40
60
80
100
120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Dec-13-1996
BFG 193
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.1 pF
9.0 GHz 10V
Ccb
0.9 0.8 0.7 0.6 0.5 0.4 0.3
fT
7.0 5V 6.0 5.0 4.0 3.0 1V 2.0 0.7V 3V
2V
0.2 0.1 0.0 0 4 8 12 16 V VR 22 1.0 0.0 0 10 20 30 40 50 60 70
mA IC
90
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
20
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
12 10V dB 5V 3V 8
dB
G
16
10V 5V 3V
G
14
2V 12 2V 6
10 4 8 1V 2 6 0.7V 4 0 10 20 30 40 50 60 70 mA IC 90 0 0 10 20 30 40 50 60 70 mA IC 90 0.7V 1V
Semiconductor Group
5
Dec-13-1996
BFG 193
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
18
VCE = Parameter, f = 900MHz
35
IC=30mA
dB
0.9GHz 0.9GHz dBm
8V
G
14 12
IP3
5V
1.8GHz 10 8 6 4 2 0 0 2 4 6 8 V 12 1.8GHz
25
3V
2V 20
15 1V
10 0
10
20
30
40
50
60
VR
mA IC
80
Power Gain Gma, Gms = f(f)
VCE = Parameter
35
Power Gain |S21|2= f(f)
VCE = Parameter
32
IC=30mA
dB
dB
IC=30mA
G
25
S21
26 22 18 14
20
15 10 10 10V 2V 1V 0.7V 0 0.0 6 2 -2 0.0 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5
5
0.5
1.0
1.5
2.0
2.5
GHz f
3.5
Semiconductor Group
6
Dec-13-1996

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